- 您现在的位置：买卖IC网 > Sheet目录526 > SUD50N10-34P-T4-E3 (Vishay Siliconix)MOSFET N-CH D-S 100V TO252
New Product
SUD50N10-34P
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) r DS(on) ( Ω )
0.034 at V GS = 10 V
100
0.040 at V GS = 6.0 V
I D (A) a
20
20
Q g (Typ)
24 nC
FEATURES
? TrenchFET ? Power MOSFET
? 100 % UIS Tested
APPLICATIONS
RoHS
COMPLIANT
? LCD TV Inverter
? LCD Backlight
TO-252
D
Drain Connected to Ta b
G
G
D
S
Top V ie w
Orderin g Information:
SUD50 N 10-34P-E3 (Lead (P b )-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
100
± 20
20 a
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
20 a
5.9 b
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
4.7 b
50
20 a
2.0 b
25
31
A
mJ
T C = 25 °C
56
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
36
2.5 b
W
T A = 70 °C
1.6 b
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b
Maximum Junction-to-Case
Steady State
Steady State
R thJA
R thJC
38
1.6
50
2.2
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Document Number: 74802
S-72068-Rev. A, 08-Oct-07
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SUD50NP04-77P-T4E3
MOSFET N/P-CH 40V TO252-4
SUD50P04-13L-E3
MOSFET P-CH D-S 40V TO252
SUD50P04-23-E3
MOSFET P-CH D-S 40V TO252
SUD50P04-40P-T4-E3
MOSFET P-CH D-S 40V TO252
SUD50P06-15L-T4-E3
MOSFET P-CH D-S 60V TO252
SUD50P08-26-E3
MOSFET P-CH D-S 80V TO252
SUD50P10-43-E3
MOSFET P-CH D-S 100V TO252
SUD50P10-43L-E3
MOSFET P-CH D-S 100V TO252
相关代理商/技术参数
SUD50NP04-62-T4-E3
功能描述:MOSFET 40V 8.0A 15.6/23.5W 30/32mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50NP04-77P
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Complementary N- and P-Channel 40-V (D-S) MOSFET
SUD50NP04-77P-T4E3
功能描述:MOSFET N/P-CH 40V TO252-4 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:TrenchFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
SUD50NP04-77P-T4-E3
功能描述:MOSFET 40V 8.0A 10.8/24W 37/40mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50NP04-94-T4-E3
功能描述:MOSFET 40V 8.0A 13.2/15.6W 41/53mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50P04-08
制造商:SHENZHENFREESCALE 制造商全称:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:P-Channel 40-V (D-S) MOSFET
SUD50P04-08-GE3
功能描述:MOSFET 40V 50A P-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50P04-08-GE3
制造商:Vishay Siliconix 功能描述:MOSFET P CH -40V -50A TO-252-3 制造商:Vishay Siliconix 功能描述:MOSFET, P CH, -40V, -50A, TO-252-3
